MSM XVII Microscopy of Semiconducting Materials 2011

MSM XVII Microscopy of Semiconducting Materials 2011
4-7 April 2011, Churchill College, Cambridge, UK


The main topic areas to be covered are as follows:
• The characterisation of as-grown semiconductors in both bulk and thin film forms.
• The study of nanostructures of all types from quantum dots, wires, etc to nanotubes.
• The investigation of lattice defect and impurity behaviour in semiconducting materials.
• The study of the effects of semiconductor processing treatments
• oxidation, nitridation, ion implantation, annealing, silicidation, etc.
• The assessment of finished electronic devices, including studies of the influence of structural defects upon their behaviour and important new
design features such as high/low k dielectrics, etc.

Special conference sessions will focus attention on recent advances in a number of areas of particular current interest, for example:
• Developments in the use of high-resolution imaging and analytical transmission electron microscopy
• studies of bulk material, layers and interfaces.
• Advances in FIB milling and nanofabrication.
• The nature of epitaxial layers, superlattices and quantum well, wire and dot structures
• strain relaxation, defect introduction, morphological distortion, self-organisation, luminescence.
• Wide bandgap semiconductors, especially III-nitrides.
• The structures of dislocations and defect boundaries in semiconductors.
• Advances in SiGe/Si for device structures such as HBTs, MOSFETs, terahertz emitters, etc.
• Metal-semiconductor contacts and silicides.
• The effects of processing treatments using both conventional and transient techniques.
• The exploitation of advanced scanning techniques
• SEM-EBIC, SEM-CL, etc.
• STM, AFM, SCM, BEEM, etc.

More: www.msm2011.org